MT53E256M16D1DS-046 WT:B TR
Micron Technology Inc.

Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
$7.48
Available to order
Reference Price (USD)
1+
$7.48500
500+
$7.41015
1000+
$7.3353
1500+
$7.26045
2000+
$7.1856
2500+
$7.11075
Exquisite packaging
Discount
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Experience top-tier performance with the MT53E256M16D1DS-046 WT:B TR Memory IC from Micron Technology Inc., a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The MT53E256M16D1DS-046 WT:B TR exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The MT53E256M16D1DS-046 WT:B TR provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The MT53E256M16D1DS-046 WT:B TR is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4
- Memory Size: 4Gb (256M x 16)
- Memory Interface: -
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.1V
- Operating Temperature: -30°C ~ 85°C (TC)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -