MT54V512H18EF-10
Micron Technology Inc.

Micron Technology Inc.
IC SRAM 9MBIT PARALLEL 165FBGA
$19.25
Available to order
Reference Price (USD)
1+
$19.25000
500+
$19.0575
1000+
$18.865
1500+
$18.6725
2000+
$18.48
2500+
$18.2875
Exquisite packaging
Discount
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The MT54V512H18EF-10 Memory IC by Micron Technology Inc. is a state-of-the-art solution for data storage and retrieval. Belonging to the Memory category, this IC is engineered to provide high-speed access and large storage capacities, making it ideal for advanced electronic applications. Its robust design ensures durability and consistent performance.
Memory ICs, such as the MT54V512H18EF-10, are distinguished by their ability to handle large datasets efficiently. These components are essential for systems that demand quick and reliable memory operations. The MT54V512H18EF-10 features advanced technology that minimizes latency and maximizes throughput, catering to high-performance requirements.
Applications of the MT54V512H18EF-10 include data centers, wearable technology, and automotive infotainment systems. For instance, it is used in enterprise servers to support massive data processing and in smartwatches for efficient data management. The MT54V512H18EF-10 is a reliable and high-performing Memory IC for various cutting-edge applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Quad Port, Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 2.4V ~ 2.6V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-TBGA
- Supplier Device Package: 165-FBGA (13x15)