MUBW25-12A7
IXYS
IXYS
IGBT MODULE 1200V 50A 225W E2
$91.88
Available to order
Reference Price (USD)
6+
$64.43000
Exquisite packaging
Discount
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IXYS's MUBW25-12A7 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the MUBW25-12A7 enables higher power density in MRI gradient amplifiers. Choose IXYS for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 225 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
- Current - Collector Cutoff (Max): 900 µA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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