MUBW35-12A7
IXYS
IXYS
IGBT MODULE 1200V 50A 225W E2
$96.92
Available to order
Reference Price (USD)
6+
$67.32000
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's MUBW35-12A7 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MUBW35-12A7 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MUBW35-12A7 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MUBW35-12A7 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 225 W
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 35A
- Current - Collector Cutoff (Max): 1.1 mA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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