MUN5213DW1T3G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SC88
$0.03
Available to order
Reference Price (USD)
10,000+
$0.03284
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MUN5213DW1T3G from onsemi represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. onsemi's expertise in semiconductor manufacturing guarantees that the MUN5213DW1T3G meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Nexperia USA Inc.
PIMN32-QX
Rohm Semiconductor
UMD25NTR
Nexperia USA Inc.
NHUMB9F
Toshiba Semiconductor and Storage
RN2965(TE85L,F)
Infineon Technologies
BCR141SH6327XTSA1
Toshiba Semiconductor and Storage
RN4987,LF(CT
Rohm Semiconductor
IMD3AT108
onsemi
NSBC114TDP6T5G
Panasonic Electronic Components
XP0411200L
Infineon Technologies