MUR20010CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 100V 100A 2TOWER
$101.66
Available to order
Reference Price (USD)
25+
$78.26560
Exquisite packaging
Discount
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For engineers specializing in power electronics, the MUR20010CTR by GeneSiC Semiconductor represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With GeneSiC Semiconductor's patented junction design, the MUR20010CTR achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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