MURT20010R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 100V 100A 3TOWER
$104.49
Available to order
Reference Price (USD)
25+
$93.45960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MURT20010R rectifier array from GeneSiC Semiconductor redefines efficiency in the Diodes - Rectifiers - Arrays classification. Its optimized chip geometry enables higher surge withstand capability, critical for automotive alternators and arc suppression circuits. This product shines in three-phase rectification and snubber networks, offering aerospace-grade reliability. GeneSiC Semiconductor's precision manufacturing ensures each MURT20010R meets stringent quality standards for mission-critical applications.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
Related Products
Rohm Semiconductor
DAN217T146
Comchip Technology
CDBT-54C-G
Vishay General Semiconductor - Diodes Division
BAT54C-G3-08
Vishay General Semiconductor - Diodes Division
VS-VSKC91/16
Nexperia USA Inc.
BAS21VD,135
onsemi
NSDEMP11XV6T5G
onsemi
DCA010-TB-E
Vishay General Semiconductor - Diodes Division
VS-QA250FA20
Yangzhou Yangjie Electronic Technology Co.,Ltd
BAT54AWT-F2-0000HF
Infineon Technologies