MURT40020R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 200V 200A 3TOWER
$132.08
Available to order
Reference Price (USD)
25+
$104.78720
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The MURT40020R from GeneSiC Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. GeneSiC Semiconductor's rigorous quality control ensures the MURT40020R maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 200 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 125 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
Related Products
Panjit International Inc.
MBR20100DC-AU_R2_000A1
Rohm Semiconductor
BAV70HMFHT116
Rohm Semiconductor
RBR30NS60ATL
Panjit International Inc.
ER1001CT_T0_00001
SMC Diode Solutions
SDURF1030CT
Micro Commercial Co
MURSB1620CTA-TP
Panjit International Inc.
MBR25100FCT_T0_00001
Nexperia USA Inc.
BAT721C,215
Infineon Technologies
BAS7006E6433HTMA1
Diodes Incorporated