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MURTA20060R

GeneSiC Semiconductor
MURTA20060R Preview
GeneSiC Semiconductor
DIODE GEN PURP 600V 100A 3 TOWER
$145.32
Available to order
Reference Price (USD)
18+
$104.63222
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 600 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower

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