MWE6IC9100NBR1-FR
Freescale Semiconductor
Freescale Semiconductor
NARROW BAND HIGH POWER AMPLIFIER
$68.43
Available to order
Reference Price (USD)
1+
$68.43000
500+
$67.7457
1000+
$67.0614
1500+
$66.3771
2000+
$65.6928
2500+
$65.0085
Exquisite packaging
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The MWE6IC9100NBR1-FR RF MOSFET transistor by Freescale Semiconductor is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The MWE6IC9100NBR1-FR stands out for its ability to handle high power levels while maintaining signal integrity. When you choose Freescale Semiconductor's MWE6IC9100NBR1-FR, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Active
- Transistor Type: LDMOS
- Frequency: 869MHz ~ 960MHz
- Gain: 33.5dB
- Voltage - Test: 26 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 120 mA
- Power - Output: 100W
- Voltage - Rated: 66 V
- Package / Case: TO-272-14 Variant, Flat Leads
- Supplier Device Package: TO-272 WB-14
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