MX0912B251Y,114
Ampleon USA Inc.
Ampleon USA Inc.
RF TRANS NPN 20V 1.215GHZ CDFM2
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Upgrade your RF circuits with the MX0912B251Y,114, a high-efficiency Bipolar Junction Transistor (BJT) from Ampleon USA Inc.. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The MX0912B251Y,114 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose Ampleon USA Inc. for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.4dB
- Power - Max: 690W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 15A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-439A
- Supplier Device Package: CDFM2
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