MX2N5115UB
Microchip Technology
Microchip Technology
JFET
$94.28
Available to order
Reference Price (USD)
1+
$94.27500
500+
$93.33225
1000+
$92.3895
1500+
$91.44675
2000+
$90.504
2500+
$89.56125
Exquisite packaging
Discount
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The MX2N5115UB from Microchip Technology represents the pinnacle of JFET technology in Discrete Semiconductor Products. This high-temperature variant operates flawlessly up to 200 C while maintaining stable parameters. The proprietary diffusion process ensures minimal parameter drift over time and temperature cycles. Oil exploration tools, geothermal monitoring systems, and aircraft engine sensors extensively use this JFET. Its unique capabilities shine in downhole electronics, combustion analysis equipment, and spacecraft thermal management systems. With its ceramic packaging and high-reliability construction, the MX2N5115UB continues to set industry benchmarks for JFET performance in extreme environment applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 15 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 15V
- Resistance - RDS(On): 100 Ohms
- Power - Max: 500 mW
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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