NAND08GW3C2BN6E
Micron Technology Inc.
Micron Technology Inc.
IC FLASH 8GBIT PARALLEL 48TSOP
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Reference Price (USD)
192+
$13.10854
Exquisite packaging
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Experience top-tier performance with the NAND08GW3C2BN6E Memory IC from Micron Technology Inc., a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The NAND08GW3C2BN6E exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The NAND08GW3C2BN6E provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The NAND08GW3C2BN6E is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND
- Memory Size: 8Gb (1G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP
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