NCV51705MNTWG
onsemi
onsemi
IC GATE DRVR LOW-SIDE 24QFN
$2.23
Available to order
Reference Price (USD)
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$2.23083
500+
$2.2085217
1000+
$2.1862134
1500+
$2.1639051
2000+
$2.1415968
2500+
$2.1192885
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Optimize your power systems with onsemi's NCV51705MNTWG, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The NCV51705MNTWG demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: SiC MOSFET
- Voltage - Supply: 10V ~ 22V
- Logic Voltage - VIL, VIH: 1.2V, 1.6V
- Current - Peak Output (Source, Sink): 6A, 6A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 8ns, 8ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 24-VFQFN Exposed Pad
- Supplier Device Package: 24-QFNW (4x4)
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