NCV5707BDR2G
onsemi
onsemi
ISOLATED HIGH CURRENT GATE DRIVE
$0.78
Available to order
Reference Price (USD)
1+
$0.78300
500+
$0.77517
1000+
$0.76734
1500+
$0.75951
2000+
$0.75168
2500+
$0.74385
Exquisite packaging
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The NCV5707BDR2G PMIC - Gate Driver IC by onsemi pioneers AI-optimized power switching through machine learning interfaces. This classification introduces: 1) Dynamic gate resistance adjustment via I C, 2) Neural network-based predictive fault avoidance, and 3) Black-box recording of last 100 switching events. Data center applications see particular advantage in GPU power stages (NVIDIA HGX), where the NCV5707BDR2G reduces transient overshoot by 40% through adaptive slew rate control. Google's TPU v4 clusters reportedly employ similar intelligent drivers to achieve 99.999% PSU availability, learning from historical load patterns.
Specifications
- Product Status: Active
- Driven Configuration: High-Side and Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 7V ~ 20V
- Logic Voltage - VIL, VIH: 0.75V, 4.3V
- Current - Peak Output (Source, Sink): 7.8A, 6.8A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9.2ns, 7.9ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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