NDD04N50Z-1G
onsemi
onsemi
MOSFET N-CH 500V 3A IPAK
$0.36
Available to order
Reference Price (USD)
1+
$0.36000
500+
$0.3564
1000+
$0.3528
1500+
$0.3492
2000+
$0.3456
2500+
$0.342
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the NDD04N50Z-1G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NDD04N50Z-1G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 61W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Nexperia USA Inc.
BUK9Y25-60E,115
Toshiba Semiconductor and Storage
XPH2R106NC,L1XHQ
Wolfspeed, Inc.
E3M0075120D
onsemi
NTHD4N02FT1G
Vishay Siliconix
SI3476DV-T1-GE3
Vishay Siliconix
SI1424EDH-T1-BE3
onsemi
FQPF45N15V2
Infineon Technologies
SPB80N03S203GATMA1
onsemi
STD1059-001
Diodes Incorporated