NDS352AP
onsemi
onsemi
MOSFET P-CH 30V 900MA SUPERSOT3
$0.55
Available to order
Reference Price (USD)
3,000+
$0.13776
6,000+
$0.12941
15,000+
$0.12106
30,000+
$0.11104
75,000+
$0.10687
Exquisite packaging
Discount
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Optimize your power electronics with the NDS352AP single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NDS352AP combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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