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NDS356AP

onsemi
NDS356AP Preview
onsemi
MOSFET P-CH 30V 1.1A SUPERSOT3
$0.45
Available to order
Reference Price (USD)
3,000+
$0.15652
6,000+
$0.14642
15,000+
$0.13632
30,000+
$0.12925
75,000+
$0.12852
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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