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NDSH20120C

onsemi
NDSH20120C Preview
onsemi
SIC DIODE GEN2.0 1200V TO
$5.68
Available to order
Reference Price (USD)
1+
$5.67722
500+
$5.6204478
1000+
$5.5636756
1500+
$5.5069034
2000+
$5.4501312
2500+
$5.393359
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 26A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 1480pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C

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