NE3512S02-T1C-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.60
Available to order
Reference Price (USD)
1+
$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
Discount
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Engineered for excellence, the NE3512S02-T1C-A RF MOSFET from Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The NE3512S02-T1C-A's robust construction ensures long-term reliability even in harsh environments. Choose Renesas Electronics America Inc's NE3512S02-T1C-A for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 13.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 70mA
- Noise Figure: 0.35dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: S02
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