NE3513M04-T2B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.89
Available to order
Reference Price (USD)
1+
$0.89000
500+
$0.8811
1000+
$0.8722
1500+
$0.8633
2000+
$0.8544
2500+
$0.8455
Exquisite packaging
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The NE3513M04-T2B-A by Renesas Electronics America Inc is a premium RF MOSFET transistor belonging to the Discrete Semiconductor Products family, specifically the Transistors - FETs, MOSFETs - RF segment. This component excels in high-frequency applications with its low gate charge, high breakdown voltage, and excellent thermal management. Ideal for RF power amplification, the NE3513M04-T2B-A is frequently utilized in amateur radio equipment, cellular infrastructure, and aerospace communication systems. Its reliable performance under extreme conditions makes it a favorite among design engineers. Whether you're developing IoT devices or advanced military communication tools, Renesas Electronics America Inc's NE3513M04-T2B-A delivers unmatched efficiency and signal integrity for your RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel GaAs HJ-FET
- Frequency: 12GHz
- Gain: 13dB
- Voltage - Test: 2 V
- Current Rating (Amps): 60mA
- Noise Figure: 0.65dB
- Current - Test: 10 mA
- Power - Output: 125mW
- Voltage - Rated: 4 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-Super Mini Mold
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