NE5520379A-T1A-A
Renesas
Renesas
SILICON MEDIUM POWER LDMOSFET, R
$5.80
Available to order
Reference Price (USD)
1+
$5.80000
500+
$5.742
1000+
$5.684
1500+
$5.626
2000+
$5.568
2500+
$5.51
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Designed for superior RF performance, the NE5520379A-T1A-A from Renesas is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The NE5520379A-T1A-A combines Renesas's advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the NE5520379A-T1A-A for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Last Time Buy
- Transistor Type: LDMOS
- Frequency: 915MHz
- Gain: 16dB
- Voltage - Test: 3.2 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 600 mA
- Power - Output: 35.5dBm
- Voltage - Rated: 15 V
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 79A
Related Products
Ampleon USA Inc.
BLP05H675XRGY
STMicroelectronics
PD57006STR-E
Ampleon USA Inc.
BLF546
Ampleon USA Inc.
BLP2425M10S250PY
Wolfspeed, Inc.
PTFA180701E-V4-R250
Wolfspeed, Inc.
CGHV40030F
Freescale Semiconductor
MRF6S19100NBR1
Wolfspeed, Inc.
CGH60060D-GP4
onsemi
CPH3424-TL-E
Ampleon USA Inc.