NE55410GR-T3-AZ
Renesas Electronics America Inc
Renesas Electronics America Inc
RF POWER N-CHANNEL, MOSFET
$4.82
Available to order
Reference Price (USD)
1+
$4.82000
500+
$4.7718
1000+
$4.7236
1500+
$4.6754
2000+
$4.6272
2500+
$4.579
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
As a leading solution in the Discrete Semiconductor Products market, the NE55410GR-T3-AZ RF MOSFET from Renesas Electronics America Inc (under Transistors - FETs, MOSFETs - RF) sets new standards for high-frequency performance. This transistor features ultra-fast switching, low thermal resistance, and outstanding ruggedness, making it ideal for RF power applications. It's commonly found in weather radar systems, mobile communication base stations, and electronic warfare equipment. The NE55410GR-T3-AZ's advanced design ensures maximum power transfer with minimal distortion. With Renesas Electronics America Inc's expertise in semiconductor innovation, the NE55410GR-T3-AZ provides engineers with a reliable, high-performance component for their most critical RF designs.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 13.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 250mA, 1A
- Noise Figure: -
- Current - Test: 20 mA
- Power - Output: 35.4dBm
- Voltage - Rated: 65 V
- Package / Case: 16-DFF, Exposed Pad
- Supplier Device Package: 16-HTSSOP
Related Products
NXP USA Inc.
MMRF1316NR1
NXP USA Inc.
MMRF1014NT1
MACOM Technology Solutions
MRF141G
Wolfspeed, Inc.
PTVA120251EA-V2-R250
Ampleon USA Inc.
BLP8G27-5Z
Fairchild Semiconductor
2N5246
Ampleon USA Inc.
BLF8G24LS-150VJ
Ampleon USA Inc.
BLL8H0514LS-130U
NXP USA Inc.
AFT05MS031NR1
Microchip Technology