NESG7030M04-A
CEL
CEL
RF TRANS NPN 4.3V 5.8GHZ M04
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The NESG7030M04-A RF Bipolar Junction Transistor (BJT) by CEL is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the NESG7030M04-A is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose CEL for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.3V
- Frequency - Transition: 5.8GHz
- Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
- Gain: 14dB ~ 21dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: M04
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