NHPD660T4G
onsemi
onsemi
DIODE GEN PURP 600V 6A DPAK
$1.60
Available to order
Reference Price (USD)
2,500+
$0.37450
5,000+
$0.35578
12,500+
$0.34240
25,000+
$0.33170
Exquisite packaging
Discount
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The NHPD660T4G by onsemi is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The NHPD660T4G is also used in smart home devices and wearable technology, ensuring seamless operation. onsemi's expertise in semiconductor technology guarantees that the NHPD660T4G delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -65°C ~ 175°C
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