NHUMB10F
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2PNP 80V 6TSSOP
$0.05
Available to order
Reference Price (USD)
1+
$0.05172
500+
$0.0512028
1000+
$0.0506856
1500+
$0.0501684
2000+
$0.0496512
2500+
$0.049134
Exquisite packaging
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Discover the versatility of Nexperia USA Inc.'s NHUMB10F, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The NHUMB10F is widely used in IoT devices, medical equipment, and renewable energy systems. Nexperia USA Inc.'s advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the NHUMB10F offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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