NJD35N04G
onsemi
onsemi
TRANS NPN DARL 350V 4A DPAK
$1.36
Available to order
Reference Price (USD)
1+
$0.95000
75+
$0.80880
150+
$0.66433
525+
$0.54882
1,050+
$0.43329
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the NJD35N04G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NJD35N04G is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 45 W
- Frequency - Transition: 90MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
STMicroelectronics
BUL510
Diodes Incorporated
ZTX458
Microchip Technology
2N5322
Rohm Semiconductor
2SCR522MT2L
Rohm Semiconductor
2SCR512RTL
Nexperia USA Inc.
BCP56-10HX
Nexperia USA Inc.
PMMT591A,235
onsemi
50C02CH-TL-E
Fairchild Semiconductor
KSH2955TF
Infineon Technologies