NJL1302DG
onsemi
onsemi
TRANS PNP 260V 15A TO264
$6.36
Available to order
Reference Price (USD)
1+
$5.25000
25+
$4.45520
100+
$3.86100
500+
$3.28680
1,000+
$2.77200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the NJL1302DG Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NJL1302DG delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP + Diode (Isolated)
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 260 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
- Current - Collector Cutoff (Max): 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
- Power - Max: 200 W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-5
- Supplier Device Package: TO-264
Related Products
Microchip Technology
2N3725L
onsemi
NSS40600CF8T1G
Rohm Semiconductor
2SC4617EBTLQ
Infineon Technologies
BCP5316H6433XTMA1
Nexperia USA Inc.
BC807-16LWF
Microchip Technology
2N720A
Diodes Incorporated
ZXTP722MATA
Fairchild Semiconductor
KSA812YMTF-FS
onsemi
NSBA114EDXV6T1
onsemi