NJVMJD128T4G
onsemi
onsemi
TRANS PNP DARL 120V 8A DPAK
$0.81
Available to order
Reference Price (USD)
2,500+
$0.23584
5,000+
$0.21957
12,500+
$0.21686
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NJVMJD128T4G from onsemi is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the NJVMJD128T4G is a reliable choice for both commercial and industrial use. Trust onsemi to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
- Power - Max: 1.75 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
STMicroelectronics
STT13005FP
Diodes Incorporated
FMMT458TA
Microchip Technology
JANTX2N2907AUB/TR
Diodes Incorporated
MMBT3906LP-7
Fairchild Semiconductor
BD239ATU
onsemi
FJA4313RTU
onsemi
MPSW51ARLRAG
onsemi
2SD1247S
onsemi
BC327-025
Diodes Incorporated