NJVMJD42CT4G
onsemi
onsemi
TRANS PNP 100V 6A DPAK
$0.40
Available to order
Reference Price (USD)
1+
$0.39652
500+
$0.3925548
1000+
$0.3885896
1500+
$0.3846244
2000+
$0.3806592
2500+
$0.376694
Exquisite packaging
Discount
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Optimize your electronic systems with the NJVMJD42CT4G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the NJVMJD42CT4G delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
- Power - Max: 1.75 W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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