NJVMJD45H11G
onsemi
onsemi
TRANS PNP 80V 8A DPAK
$0.95
Available to order
Reference Price (USD)
1+
$0.97000
75+
$0.80560
150+
$0.65747
525+
$0.51975
1,050+
$0.41580
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NJVMJD45H11G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the NJVMJD45H11G ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of NJVMJD45H11G and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 1.75 W
- Frequency - Transition: 90MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
Sanken
2SA1725
onsemi
MMBT589LT1G
Sanyo
2SC2812N6-CPA-TB-E
Central Semiconductor Corp
MPSA56 PBFREE
Renesas Electronics America Inc
2SD1695-AZ
Rohm Semiconductor
2SD2153T100V
Harris Corporation
2N6542
Diotec Semiconductor
BC856C
Rohm Semiconductor
2SCR544PHZGT100
Infineon Technologies