NJVMJD45H11T4G-VF01
onsemi
onsemi
TRANS PNP 80V 8A DPAK
$0.98
Available to order
Reference Price (USD)
1+
$0.98000
500+
$0.9702
1000+
$0.9604
1500+
$0.9506
2000+
$0.9408
2500+
$0.931
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the NJVMJD45H11T4G-VF01 Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NJVMJD45H11T4G-VF01 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
- Power - Max: 1.75 W
- Frequency - Transition: 90MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
NXP Semiconductors
BC68-25PA,115
Panjit International Inc.
BC848B-AU_R1_000A1
Nexperia USA Inc.
BCP53-16HX
Central Semiconductor Corp
2N3906 PBFREE
Microchip Technology
JANTX2N3486A
Toshiba Semiconductor and Storage
2SC3265-Y,LF
Nexperia USA Inc.
BC817-40QBZ
NTE Electronics, Inc
NTE16006
onsemi
MCH6203-TL-E
Nexperia USA Inc.