NJW44H11G
onsemi
onsemi
TRANS NPN 80V 10A TO3P-3L
$2.30
Available to order
Reference Price (USD)
1+
$1.86000
30+
$1.57500
120+
$1.34192
510+
$1.10251
1,020+
$0.91350
Exquisite packaging
Discount
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Enhance your circuit designs with the NJW44H11G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NJW44H11G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 4A, 2V
- Power - Max: 120 W
- Frequency - Transition: 85MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P-3L
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