NP80N04MHE-S18-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 80A TO220
$1.84
Available to order
Reference Price (USD)
1+
$1.84000
500+
$1.8216
1000+
$1.8032
1500+
$1.7848
2000+
$1.7664
2500+
$1.748
Exquisite packaging
Discount
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Enhance your electronic projects with the NP80N04MHE-S18-AY single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's NP80N04MHE-S18-AY for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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