NP83P04PDG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 40V 83A TO-263
$2.86
Available to order
Reference Price (USD)
1+
$2.86000
500+
$2.8314
1000+
$2.8028
1500+
$2.7742
2000+
$2.7456
2500+
$2.717
Exquisite packaging
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Discover the NP83P04PDG-E1-AY from Renesas Electronics America Inc, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the NP83P04PDG-E1-AY ensures reliable performance in demanding environments. Upgrade your circuit designs with Renesas Electronics America Inc's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 41.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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