NSB8DTHE3_B/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
$0.69
Available to order
Reference Price (USD)
1+
$0.69300
500+
$0.68607
1000+
$0.67914
1500+
$0.67221
2000+
$0.66528
2500+
$0.65835
Exquisite packaging
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Optimize your electronic designs with the NSB8DTHE3_B/I single rectifier diode from Vishay General Semiconductor - Diodes Division. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The NSB8DTHE3_B/I is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Vishay General Semiconductor - Diodes Division's commitment to innovation ensures that the NSB8DTHE3_B/I meets the highest industry standards for performance and longevity.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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