NSBA143EDXV6T1
onsemi
onsemi
TRANS 2PNP PREBIAS 0.5W SOT563
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing onsemi's NSBA143EDXV6T1, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. onsemi's dedication to excellence ensures that the NSBA143EDXV6T1 meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Nexperia USA Inc.
PUMD3,165
Panasonic Electronic Components
DMC564000R
Toshiba Semiconductor and Storage
RN1903,LF(CT
Toshiba Semiconductor and Storage
RN4902FE,LXHF(CT
Rohm Semiconductor
EMF5T2R
NXP USA Inc.
PBLS1503V,115
onsemi
MUN5213DW1T1G
onsemi
MUN5333DW1T1G
onsemi
MUN5313DW1T1G
Diodes Incorporated