NSBA144TF3T5G
onsemi
onsemi
TRANS PREBIAS PNP 50V SOT1123
$0.04
Available to order
Reference Price (USD)
8,000+
$0.09765
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose NSBA144TF3T5G for its exceptional linearity in amplification circuits. onsemi's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 254 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: SOT-1123
Related Products
Diodes Incorporated
DDTC123ECAQ-7-F
Toshiba Semiconductor and Storage
RN2404,LXHF
Diodes Incorporated
DDTC143XUA-7-F
Rohm Semiconductor
DTB113ECHZGT116
Toshiba Semiconductor and Storage
RN2308(TE85L,F)
Rohm Semiconductor
DTA114YCAHZGT116
onsemi
MUN5241T1G
Diodes Incorporated
DDTA144WCA-7
Rohm Semiconductor
DTC124XCAHZGT116
Micro Commercial Co