NSBC114EPDP6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT963
$0.40
Available to order
Reference Price (USD)
8,000+
$0.06110
16,000+
$0.05231
24,000+
$0.04938
56,000+
$0.04645
200,000+
$0.04157
Exquisite packaging
Discount
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The NSBC114EPDP6T5G from onsemi is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the NSBC114EPDP6T5G ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, onsemi's NSBC114EPDP6T5G delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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