NSS12100UW3TCG
onsemi
onsemi
TRANS PNP 12V 1A 3WDFN
$0.62
Available to order
Reference Price (USD)
3,000+
$0.19839
6,000+
$0.18559
15,000+
$0.17279
30,000+
$0.17066
Exquisite packaging
Discount
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Upgrade your electronic designs with the NSS12100UW3TCG Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NSS12100UW3TCG is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust onsemi for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 740 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-WDFN Exposed Pad
- Supplier Device Package: 3-WDFN (2x2)
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