NSS20101JT1G
onsemi
onsemi
TRANS NPN 20V 1A SC89-3
$0.35
Available to order
Reference Price (USD)
3,000+
$0.06638
6,000+
$0.05804
15,000+
$0.04969
30,000+
$0.04691
75,000+
$0.04412
150,000+
$0.03949
Exquisite packaging
Discount
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Enhance your circuit designs with the NSS20101JT1G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NSS20101JT1G is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 300 mW
- Frequency - Transition: 350MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SC-89-3
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