NSV1C300ET4G-VF01
onsemi
onsemi
TRANS PNP 100V 3A DPAK
$0.32
Available to order
Reference Price (USD)
1+
$0.31616
500+
$0.3129984
1000+
$0.3098368
1500+
$0.3066752
2000+
$0.3035136
2500+
$0.300352
Exquisite packaging
Discount
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Optimize your electronic systems with the NSV1C300ET4G-VF01 Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the NSV1C300ET4G-VF01 delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Last Time Buy
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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