NSV1C301ET4G
onsemi
onsemi
TRANS NPN 100V 3A DPAK
$0.32
Available to order
Reference Price (USD)
1+
$0.32123
500+
$0.3180177
1000+
$0.3148054
1500+
$0.3115931
2000+
$0.3083808
2500+
$0.3051685
Exquisite packaging
Discount
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Optimize your electronic systems with the NSV1C301ET4G Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the NSV1C301ET4G delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 2.1 W
- Frequency - Transition: 120MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
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