NSV60101DMR6T2G
onsemi
onsemi
60V 1A DUAL NPN LOW VCE(SAT) IN
$0.15
Available to order
Reference Price (USD)
1+
$0.15264
500+
$0.1511136
1000+
$0.1495872
1500+
$0.1480608
2000+
$0.1465344
2500+
$0.145008
Exquisite packaging
Discount
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The NSV60101DMR6T2G from onsemi is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision amplification and switching applications. This Discrete Semiconductor Product integrates multiple transistors in a single package, offering enhanced thermal stability and space-saving benefits. Ideal for analog circuits, motor control, and signal processing, the NSV60101DMR6T2G ensures reliable performance in industrial automation, automotive electronics, and consumer devices. Its compact design and low power consumption make it a preferred choice for engineers seeking efficiency and durability.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
- Power - Max: 400mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SC-74
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