NSV60201SMTWTBG
onsemi
onsemi
TRANS NPN 60V 2A 6WDFN
$0.19
Available to order
Reference Price (USD)
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$0.19000
500+
$0.1881
1000+
$0.1862
1500+
$0.1843
2000+
$0.1824
2500+
$0.1805
Exquisite packaging
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Optimize your electronic systems with the NSV60201SMTWTBG Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the NSV60201SMTWTBG delivers superior performance in diverse environments. onsemi's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
- Power - Max: 1.8 W
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WDFN (2x2)
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