NSVBC143ZPDXV6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.11
Available to order
Reference Price (USD)
8,000+
$0.10742
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the versatility of onsemi's NSVBC143ZPDXV6T5G, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The NSVBC143ZPDXV6T5G is widely used in IoT devices, medical equipment, and renewable energy systems. onsemi's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the NSVBC143ZPDXV6T5G offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Diodes Incorporated
ADC143TUQ-13
NXP USA Inc.
PUMB14,115
Nexperia USA Inc.
PEMB10,115
Diodes Incorporated
ADC143TUQ-7
Rohm Semiconductor
UMB2NTN
Toshiba Semiconductor and Storage
RN1503(TE85L,F)
Diodes Incorporated
DDC114EH-7
Panasonic Electronic Components
XN0F26100L
Toshiba Semiconductor and Storage
RN2969(TE85L,F)
Toshiba Semiconductor and Storage