NSVF3007SG3T1G
onsemi
onsemi
RF TRANSISTOR FOR LOW NOISE AMPL
$0.31
Available to order
Reference Price (USD)
3,000+
$0.23100
6,000+
$0.21600
15,000+
$0.20850
30,000+
$0.20100
Exquisite packaging
Discount
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The NSVF3007SG3T1G by onsemi is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the NSVF3007SG3T1G from onsemi, a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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