NSVMMBD354LT1G
onsemi
onsemi
DIODE SCHOTTKY 7V 300MW SOT23-3
$0.61
Available to order
Reference Price (USD)
3,000+
$0.18942
6,000+
$0.17787
15,000+
$0.16632
30,000+
$0.15824
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NSVMMBD354LT1G RF Diode by onsemi is a high-reliability component in the Diodes - RF classification, part of the broader Discrete Semiconductor Products range. Its excellent thermal management and high-frequency capabilities make it suitable for RF filters, oscillators, and transceivers. Industries such as aerospace, telecommunications, and consumer electronics benefit from its superior performance. Choose onsemi's NSVMMBD354LT1G for a diode that delivers precision and durability in every application.
Specifications
- Product Status: Active
- Diode Type: Schottky - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 7V
- Current - Max: -
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 300 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Toshiba Semiconductor and Storage
JDP2S08SC(TPL3)
MACOM Technology Solutions
MA4E1317
MACOM Technology Solutions
MA4P4301B-402
onsemi
MBD330DWT1
MACOM Technology Solutions
MA4P604-131
NXP USA Inc.
BAP64Q,125
MACOM Technology Solutions
MSWSE-005-15
MACOM Technology Solutions
MA4SPS302
NXP USA Inc.
BAP51-02,115
Infineon Technologies