NSVMMBT6429LT1G
onsemi
onsemi
TRANS NPN 45V 0.2A SOT23-3
$0.36
Available to order
Reference Price (USD)
3,000+
$0.08778
6,000+
$0.07900
15,000+
$0.07022
30,000+
$0.06584
75,000+
$0.05852
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NSVMMBT6429LT1G Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NSVMMBT6429LT1G provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V
- Power - Max: 300 mW
- Frequency - Transition: 700MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Infineon Technologies
BCX42E6327
onsemi
SMMBT6427LT1G
Microchip Technology
2N6230
Microchip Technology
JAN2N6033
onsemi
NZT6717-ON
Nexperia USA Inc.
BC68PA,115
Rohm Semiconductor
2SCRC41CHZGT116S
Microchip Technology
JANSL2N3635L
onsemi
BC859CLT1
NXP USA Inc.