NSVMUN5212DW1T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SOT363
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07490
6,000+
$0.06548
15,000+
$0.05606
30,000+
$0.05292
75,000+
$0.04978
150,000+
$0.04455
Exquisite packaging
Discount
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Optimize your designs with onsemi's NSVMUN5212DW1T1G, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The NSVMUN5212DW1T1G is widely used in lighting systems, portable electronics, and automotive accessories. onsemi's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the NSVMUN5212DW1T1G is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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